P3C1024L70TI datasheet(6/10 Pages) PYRAMID

Part #	P3C1024L70TI

Description	ULTRA LOW POWER 128K x 8 CMOS STATIC RAM

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Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

Direct Link	http://www.pyramidsemiconductor.com

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6 / 10 page

P3C1024L

Page 6 of 9

Document # SRAM132 REV OR

D

IN

Write

Active

Read

TIMING WAVEFORM OF WRITE CYCLE NO.2 (

CE

CE CONTROLLED)(6)

* including scope and test fixture.

Note:

Because of the high speed of the P3C1024L, care must be taken

when testing this device; an inadequate setup can cause a normal

functioning part to be rejected as faulty. Long high-inductance

leads that cause supply bounce must be avoided by bringing the V

CC

and ground planes directly up to the contactor fingers. A 0.01 µF

high frequency capacitor is also required between V

CC and ground.

To avoid signal reflections, proper termination must be used; for

example, a 50

Ω test environment should be terminated into a 50Ω

load with 1.75V (Thevenin Voltage) at the comparator input, and a

595

Ω resistor must be used in series with D

OUT to match 645Ω

(Thevenin Resistance).

AC TEST CONDITIONS

TRUTH TABLE

Input Pulse Levels

Input Rise and Fall Times

Input Timing Reference Level

Output Timing Reference Level

Output Load

GND to 3.0V

3ns

1.5V

See Fig. 1 and 2

Mode

Standby

Output

Disabled

Standby

Power

I/O

WE

OE

CE

2

CE

1

High Z

D

OUT

X

H

L

X

H

L

X

L

H

X

L

Standby

Active

High Z

Figure 1. Output Load

Figure 2. Thevenin Equivalent

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