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P4C150-35SM Datasheet(PDF) 2 Page - Pyramid Semiconductor Corporation |
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P4C150-35SM Datasheet(HTML) 2 Page - Pyramid Semiconductor Corporation |
2 / 11 page P4C150 Page 2 of 11 Document # SRAM105 REV A Symbol Parameter Value Unit V CC Power Supply Pin with – 0.5 to +7 V Respect to GND Terminal Voltage with – 0.5 to V TERM Respect to GND V CC +0.5 V (up to 7.0V) T A Operating Temperature – 55 to +125 °C Symbol Parameter Value Unit T BIAS Temperature Under – 55 to +125 °C Bias T STG Storage Temperature – 65 to +150 °C P T Power Dissipation 1.0 W I OUT DC Output Current 50 mA CAPACITANCES(4) (V CC = 5.0V, TA = 25°C, f = 1.0MHz) Grade(2) Commercial Military Symbol Parameter Conditions Typ. Unit C IN Input Capacitance V IN = 0V 5 pF C OUT Output Capacitance V OUT= 0V 7 pF Ambient Temp 0°C to 70°C -55°C to +125°C Gnd 0V 0V V CC 5.0V ± 10% 5.0V ± 10% RECOMMENDED OPERATING CONDITIONS V OH V OL V IH V IL I LI I LO Parameter Symbol Output High Voltage (TTL Load) Output Low Voltage (TTL Load) Input High Voltage Input Low Voltage Input Leakage Current Output Leakage Current Test Conditions I OH = –4 mA, VCC = Min. I OL = +8 mA, VCC = Min V CC = Max., VIN = GND to VCC V CC = Max., CS = VIH, VOUT = GND to VCC P4C150 Min. 2.4 2.2 –0.5(3) –5 –5 DC ELECTRICAL CHARACTERISTICS Over recommended operating temperature and supply voltage (2) Max. V CC =+0.5 0.8 +5 +5 Unit V V V µA µA V 0.4 Symbol Parameter Temperature Range 130 N/A Unit mA mA 130 N/A 120 145 115 135 100 125 N/A 120 Commercial Military Dynamic Operating Current I CC -10 -12 -15 -20 -25 -35 Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other condi- tions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating condi- tions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with V IL and IIL not more negative than – 3.0V and – 100mA, respectively, are permissible for pulse widths up to 20ns. 4. This parameter is sampled and not 100% tested. POWER DISSIPATION CHARACTERISTICS VS. SPEED MAXIMUM RATINGS(1) |
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