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CY7C1020DV33
Document #: 38-05461 Rev. *D
Page 5 of 10
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min.
Max.
Unit
VDR
VCC
2.0
V
ICCDR
Data Retention Current
VCC = VDR = 2.0V, CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
Industrial
3mA
Automotive
15
mA
tCDR
[5]
Chip Deselect to Data Retention Time
0
ns
tR
[13]
Operation Recovery Time
tRC
ns
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)[14, 15]
Read Cycle No. 2 (OE Controlled)[15, 16]
3.0V
3.0V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
VCC
PREVIOUS DATA VALID
DATA VALID
RC
tAA
tOHA
tRC
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZBE
tPD
tDBE
tLZBE
tHZCE
HIGH
IMPEDANCE
ICC
ISB
OE
CE
ADDRESS
DATA OUT
VCC
SUPPLY
BHE,BLE
CURRENT
Notes:
13. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 50 µs or stable at VCC(min.) > 50 µs.
14. Device is continuously selected. OE, CE, BHE and/or BLE = VIL.
15. WE is HIGH for Read cycle.
16. Address valid prior to or coincident with CE transition LOW.
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