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CY7C1049BNV33
Document #: 001-06432 Rev. **
Page 4 of 8
Data Retention Characteristics Over the Operating Range (For L version only)
Parameter
Description
Conditions[10]
Min.
Max
Unit
VDR
VCC for Data Retention
2.0
V
ICCDR
Data Retention Current
VCC = VDR = 2.0V,
CE > VCC – 0.3V
VIN > VCC – 0.3V or VIN < 0.3V
330
µA
tCDR
[3]
Chip Deselect to Data Retention
Time
0ns
tR
[11]
Operation Recovery Time
tRC
ns
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1[12, 13]
Read Cycle No. 2 (OE Controlled)[13, 14]
Notes:
12. Device is continuously selected. OE, CE = VIL.
13. WE is HIGH for read cycle.
14. Address valid prior to or coincident with CE transition LOW.
3.0V
3.0V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
V
CC
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZCE
tPD
HIGH
OE
CE
ICC
ISB
IMPEDANCE
ADDRESS
DATA OUT
VCC
SUPPLY
CURRENT
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