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AON4413 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AON4413 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 4 page  Symbol 10 Sec Steady State VDS VGS -6.5 -4.7 -5.3 -3.7 IDM 3.1 1.6 2.0 1.0 TJ, TSTG Parameter Symbol Typ Max t ≤ 10s 34 40 Steady State 66 80 Steady State RθJL 20 25 Pulsed Drain Current B Power Dissipation A TA=25°C Junction and Storage Temperature Range TA=70°C Continuous Drain Current A Units Parameter TA=25°C TA=70°C V V A ID Gate-Source Voltage Drain-Source Voltage -30 Absolute Maximum Ratings TA=25°C unless otherwise noted PD Maximum Junction-to-Lead C °C/W Thermal Characteristics Units Maximum Junction-to-Ambient A °C/W Maximum Junction-to-Ambient A °C/W RθJA °C -55 to 150 W ±20 -25 G D D D S D D D AON4413 P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -6.5A (VGS = -10V) RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 60mΩ (VGS = -6V) General Description The AON4413 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AON4413 is Pb-free (meets ROHS & Sony 259 specifications). G D S DFN 3x2 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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Similar Description - AON4413 |
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