DS05-13107-2E

FUJITSU SEMICONDUCTOR

DATA SHEET

Copyright©2007 FUJITSU LIMITED All rights reserved

Memory FRAM

CMOS

2 M Bit (256 K

× 8)

MB85R2001

■ DESCRIPTIONS

The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits

of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

The MB85R2001 is able to retain data without using a back-up battery, as is needed for SRAM.

The MB85R2001 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.

■ FEATURES

• Bit configuration

: 262,144 words

× 8 bits

• Read/write endurance

• Operating power supply voltage : 3.0 V to 3.6 V

• Operating temperature range

:

− 20 °C to + 85 °C

• Data retention

: 10 years (

+ 55 °C)

• Package

: 48-pin plastic TSOP (1)