MMG3001NT1

1

RF Device Data

Freescale Semiconductor

MMG3001NT1

40-3600 MHz, 20 dB

18.5 dBm

InGaP HBT

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

Broadband High Linearity Amplifier

The MMG3001NT1 is a General Purpose Amplifier that is internally

input and output matched. It is designed for a broad range of Class A,

small-signal, high linearity, general purpose applications. It is suitable for

applications with frequencies from 40 to 3600 MHz such as Cellular, PCS,

BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.

Features

• Frequency: 40-3600 MHz

• P1dB: 18.5 dBm @ 900 MHz

• Small-Signal Gain: 20 dB @ 900 MHz

• Third Order Output Intercept Point: 32 dBm @ 900 MHz

• Single Voltage Supply

• Internally Matched to 50 Ohms

• Low Cost SOT-89 Surface Mount Package

• RoHS Compliant

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

CASE 1514-02, STYLE 1

SOT-89

PLASTIC

1 2

3

Characteristic

Symbol

900

MHz

2140

MHz

3500

MHz

Unit

Small -Signal Gain

(S21)

20

18

16

dB

Input Return Loss

(S11)

IRL

-25

-25

-19

dB

Output Return Loss

(S22)

ORL

-22

-18

-17

dB

Power Output @1dB

Compression

P1db

18.5

18

15.5

dBm

Third Order Output

Intercept Point

IP3

32

31

28.5

dBm

Table 2. Maximum Ratings

Rating

Symbol

Value

Unit

7

V

300

mA

RF Input Power

10

dBm

Storage Temperature Range

-65 to +150

°C

150

°C

2. Voltage and current applied to device.

3. For reliable operation, the junction temperature should not

exceed 150°C.

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

92.0

°C/W

4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MMG3001NT1

Rev. 6, 7/2007

Freescale Semiconductor

Technical Data

© Freescale Semiconductor, Inc., 2004-2007. All rights reserved.