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P4C174-10PC Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation |
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P4C174-10PC Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation |
3 / 12 page P4C174 Page 3 of 12 Document # SRAM118 REV C DATA RETENTION CHARACTERISTICS (P4C174 Military Temperature Only) Symbol V DR I CCDR t CDR t R † Parameter V CC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Test Conditons CE ≥ V CC –0.2V, V IN ≥ VCC –0.2V or V IN ≤ 0.2V Min 2.0 0 t RC § Typ.* V CC = 2.0V 3.0V Max V CC = 2.0V 3.0V Unit 10 15 600 900 V µA ns ns *T A = +25¹C §t RC = Read Cycle Time † This parameter is guaranteed but not tested. I CC Symbol Parameter Temperature Range Dynamic Operating Current* Commercial –8 –10 –12 –15 –20 –25 Unit mA POWER DISSIPATION CHARACTERISTICS VS. SPEED 200 180 170 155 150 *V CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH. 170 160 155 mA Military DATA RETENTION WAVEFORM |
Similar Part No. - P4C174-10PC |
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