P4C174-8JM datasheet(3/12 Pages) PYRAMID

Part #	P4C174-8JM

Description	HIGH SPEED 8K x 8 CACHE TAG STATIC RAM

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Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

Direct Link	http://www.pyramidsemiconductor.com

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P4C174

Page 3 of 12

Document # SRAM118 REV C

DATA RETENTION CHARACTERISTICS (P4C174 Military Temperature Only)

Symbol

V

DR

I

CCDR

t

CDR

t

R

†

Parameter

V

CC for Data Retention

Data Retention Current

Chip Deselect to

Data Retention Time

Operation Recovery Time

Test Conditons

CE

≥ V

CC –0.2V,

V

IN ≥ VCC –0.2V

or V

IN ≤ 0.2V

Min

2.0

0

t

RC

§

Typ.*

V

CC =

2.0V

3.0V

Max

V

CC =

2.0V

3.0V

Unit

10

15

600

900

V

µA

ns

*T

A = +25¹C

§t

RC = Read Cycle Time

†

This parameter is guaranteed but not tested.

I

CC

Symbol

Parameter

Temperature

Range

Dynamic Operating Current*

Commercial

–8

–10

–12

–15

–20

–25

Unit

mA

POWER DISSIPATION CHARACTERISTICS VS. SPEED

200

180

170

155

150

*V

CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.

170

160

155

mA

Military

DATA RETENTION WAVEFORM

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