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P4C198-10JC Datasheet(PDF) 7 Page - Pyramid Semiconductor Corporation |
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P4C198-10JC Datasheet(HTML) 7 Page - Pyramid Semiconductor Corporation |
7 / 13 page P4C198/198L, P4C198A/198AL Page 7 of 13 Document # SRAM113 REV A WRITE CYCLE NO. 2 (WE WE WE WE WE CONTROLLED)(13,14) 1520 08 WRITE CYCLE NO. 3 (CE CE CE CE CE(12) CONTROLLED)(13,14) Notes: 13. CE (CE 1, CE2 for P4C198A/L) and WE must be LOW for WRITE cycle. 14. OE is LOW for this WRITE cycle. 15. If CE (CE 1 or CE2 for P4C198A/L) goes HIGH simultaneously with WE HIGH, the output remains in a high impedance state. 16. Write Cycle Time is measured from the last valid address to the first transitioning address. |
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