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P4C1024L70SI Datasheet(PDF) 2 Page - Pyramid Semiconductor Corporation

Part # P4C1024L70SI
Description  LOW POWER 128K x 8 CMOS STATIC RAM
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Manufacturer  PYRAMID [Pyramid Semiconductor Corporation]
Direct Link  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C1024L70SI Datasheet(HTML) 2 Page - Pyramid Semiconductor Corporation

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P4C1024L
Page 2 of 10
Document # SRAM125 REV C
GND
≤ V
IN ≤ VCC
Ind'l.
Com'l.
I
LO
RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE
MAXIMUM RATINGS(1)
Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings
only. Functional operation of the device is not implied at these or any other conditions in excess of those given in
the operational sections of this data sheet. Exposure to Maximum Ratings for extended periods can adversely
affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)(2)
Temperature Range (Ambient)
Supply Voltage
4.5V
≤ V
CC ≤ 5.5V
Industrial (-40°C to 85°C)
4.5
≤ V
CC ≤ 5.5V
Commercial (0°C to 70°C)
Symbol
Parameter
Min
Max
Unit
V
CC
Supply Voltage with Respect to GND
-0.5
7.0
V
V
TERM
Terminal Voltage with Respect to GND (up to 7.0V)
-0.5
V
CC + 0.5
V
T
A
Operating Ambient Temperature
-55
125
°C
S
TG
-65
150
°C
I
OUT
Output Current into Low Outputs
25
mA
I
LAT
Latch-up Current
>200
mA
Storage Temperature
Symbol
Parameter
V
OH
V
OL
V
IH
V
IL
I
LI
I
SB
I
SB1
Output High Voltage
(I/O
0 - I/O7)
Output Low Voltage
(I/O
0 - I/O7)
Input High Voltage
Input Low Voltage
V
CC Current
CMOS Standby Current
(CMOS Input Levels)
V
CC Current
TTL Standby Current
(TTL Input Levels)
Output Leakage Current
Input Leakage Current
I
OH = –1mA, VCC = 4.5V
I
OL = 2.1mA
V
CC = 5.5V, IOUT = 0 mA
CE
1 ≥ VCC -0.2V, CE2 ≤ 0.2V
V
CC = 5.5V, IOUT = 0 mA
CE
1 = VIH or CE2 = VIL
GND
≤ V
OUT ≤ VCC
Ind'l.
CE
1 ≥ VIH or CE2 ≤ VIL
Com'l.
Test Conditions
Min
Max
Unit
2.4
2.2
-0.5
-5
-2
-5
-2
V
V
V
V
µA
µA
mA
µA
0.4
V
CC + 0.3
0.8
+5
+2
+5
+2
3
100


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