P4C1026-25L32C datasheet(6/10 Pages) PYRAMID

Part #	P4C1026-25L32C

Description	ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM

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Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

Direct Link	http://www.pyramidsemiconductor.com

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6 / 10 page

P4C1026

Page 6 of 10

Document # SRAM127 REV E

Input Pulse Levels

GND to 3.0V

Input Rise and Fall Times

3ns

Input Timing Reference Level

1.5V

Output Timing Reference Level

1.5V

Output Load

See Figures 1 and 2

* including scope and test fixture.

Note:

Because of the ultra-high speed of the P4C1258, care must be taken

when testing this device; an inadequate setup can cause a normal

functioning part to be rejected as faulty. Long high-inductance leads

that cause supply bounce must be avoided by bringing the V

CC and

ground planes directly up to the contactor fingers. A 0.01 µF high

frequency capacitor is also required between V

CC and ground. To avoid

signal reflections, proper termination must be used; for example, a 50

Ω

test environment should be terminated into a 50

Ω load with 1.73V

(Thevenin Voltage) at the comparator input, and a 116

Ω resistor must

be used in series with D

OUT to match 166Ω (Thevenin Resistance).

Figure 1. Output Load

Figure 2. Thevenin Equivalent

AC TEST CONDITIONS

TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE

CE

CE CONTROLLED)(10)

Mode

CE

OE

WE

I/O

Power

Standby

H

X

High Z

Standby

D

OUT

Disabled

L

H

High Z

Active

Read

L

H

D

OUT

Active

Write

L

X

L

High Z

Active

TRUTH TABLE

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