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P4C198-15LC Datasheet(PDF) 6 Page - Pyramid Semiconductor Corporation |
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P4C198-15LC Datasheet(HTML) 6 Page - Pyramid Semiconductor Corporation |
6 / 13 page P4C198/198L, P4C198A/198AL Page 6 of 13 Document # SRAM113 REV A -10 -12 -15 -20 -25 -35 -45 Min Max Min Max Min Max Min Max Min Max Min Max Min Max t WC Write Cycle Time 10 12 13 15 20 30 40 ns t CW Chip Enable Time 7 8 10 15 20 30 35 ns to End of Write t AW Address Valid to 8 8 10 15 20 25 35 ns End of Write t AS Address Set-up 0 0 0000 0 ns Time t WP Write Pulse 8 9 10 12 20 25 35 ns Width t AH Address Hold 0 0 0000 0 ns Time from End of Write t DW Data Valid to End 7 6 7 10 13 15 20 ns of Write t DH Data Hold Time 0 0 0000 0 ns t WZ Write Enable to 7 6 7 8 10 10 15 ns Output in High Z t OW Output Active 3 3 3333 3 ns from End of Write AC CHARACTERISTICS—WRITE CYCLE (V CC = 5V ± 10%, All Temperature Ranges) (2) Sym. Parameter Unit WRITE CYCLE NO. 1 (With OE OE OE OE OE high) |
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