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P4C1048L-100CWI Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation |
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P4C1048L-100CWI Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation |
3 / 12 page P4C1048L Page 3 of 12 Document # SRAM129 REV D DC ELECTRICAL CHARACTERISTICS (Over Recommended Operating Temperature & Supply Voltage)(b) I SB Standby Power Supply Current (TTL Input Levels) CE ≥ V IH Mil. V CC= Max, Ind./Com’l. f = Max., Outputs Open CE ≥ V HC Mil. V CC= Max, Ind./Com’l. f = 0, Outputs Open V IN ≤ VLC or VIN ≥ VHC Standby Power Supply Current (CMOS Input Levels) I SB1 Symbol V IH V IL V HC V LC I LI I LO Parameter Input High Voltage Input Low Voltage CMOS Input High Voltage CMOS Input Low Voltage Input Leakage Current Test Conditions V CC = Max. Mil. V IN = GND to VCC Ind./Com’l. V CC = Max., Mil. CE = V IH, Ind./Com’l. V OUT = GND to VCC Unit V V V V µA µA mA µA V OL Output Low Voltage (TTL Load) I OL = +2.1 mA, VCC = Min. V Output High Voltage (TTL Load) V OH I OH = –1 mA, VCC = Min. V Output Leakage Current P4C1048L ___ ___ 5 3 100 30 ___ ___ Min 2.2 –0.5(c) V CC –0.2 –0.5(c) –10 –5 –10 –5 Max V CC +0.5 0.8 V CC +0.5 0.2 +10 +5 +10 +5 0.4 2.4 N/A = Not Applicable |
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