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P4C422-25SM Datasheet(PDF) 4 Page - Pyramid Semiconductor Corporation |
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P4C422-25SM Datasheet(HTML) 4 Page - Pyramid Semiconductor Corporation |
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4 / 10 page  P4C422 Page 4 of 10 Document # SRAM101 REV. A Max AC CHARACTERISTICS—WRITE CYCLE (V CC = 5V ± 10% except as noted, All Temperature Ranges) (2) TIMING WAVEFORM OF WRITE CYCLE Parameter Write Cycle Time (5) Write Enable to High-Z (6) Write Recovery Time Write Pulse Width (5,7) Data Setup Time Prior to Write (5) Data Hold Time (5) Address Setup Time (5,7) Address Hold Time (5) Chip Select Setup Time (5) Chip Select Hold Time (5) Sym. t WC t ZWS t WR t W t WSD t WHD t WSA t WHA t WSCS t WHCS -10* -12 -15 -20 -25 -35 Unit Min Max Min Max Min Max Min Min Max Min Max 10 8 0 2 8 8 12 9 0 10 10 15 11 0 2 12 12 20 13 2 15 15 25 15 5 20 20 35 20 5 30 25 ns ns ns ns ns *V CC = 5V ± 5% 22 5 55 ns 00 0 2 5 5 ns 22 4 5 5 5 ns 0 00 2 5 5 ns 22 5 5 5 ns |
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