Electronic Components Datasheet Search |
|
P4C187-35DM Datasheet(PDF) 5 Page - Pyramid Semiconductor Corporation |
|
P4C187-35DM Datasheet(HTML) 5 Page - Pyramid Semiconductor Corporation |
5 / 12 page P4C187/187L Page 5 of 12 Document # SRAM111 REV B Notes: 9. CE and WE must be LOW for WRITE cycle. 10. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high impedance state. 11. Write Cycle Time is measured from the last valid address to the first transition address. TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE WE WE WE WE CONTROLLED)(9) AC CHARACTERISTICS - WRITE CYCLE (V CC = 5V ± 10%, All Temperature Ranges) (2) Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max tWC Write Cycle Time 10 12 15 20 25 35 45 55 70 85 tCW Chip Enable Time to End of Write 8 10 12152025303540 45 tAW Address Valid to End of Write 8 10 12152025303540 45 tAS Address Set-up Time 00000 00000 tWP Write Pulse Width 8 10 12 15 20 25 30 35 40 45 tAH Address Hold Time from End of Write 00000 00000 tDW Data Valid to End of Write 6 7 10 13 15 20 25 30 35 40 tDH Data Hold Time00000 00000 tWZ Write Enable to Output in High Z 6 7 8 12 15 17 20 25 30 35 tOW Output Active from End of Write 00000 00000 -15-20 -25-35 -45-55 -70-85 Parameter Symbol -10 -12 |
Similar Part No. - P4C187-35DM |
|
Similar Description - P4C187-35DM |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |