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IDT7016L25PFGB Datasheet(PDF) 8 Page - Integrated Device Technology |
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IDT7016L25PFGB Datasheet(HTML) 8 Page - Integrated Device Technology |
8 / 20 page 6.42 IDT7016S/L High-Speed 16K x 9 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges 8 APRIL 04, 2006 tRC R/ W CE ADDR tAA OE 3190 drw 07 (4) tACE (4) tAOE (4) (1) tLZ tOH (2) tHZ (3,4) tBDD DATAOUT BUSYOUT VALID DATA (4) Waveform of Read Cycles(5) NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is de-asserted first, CE or OE. 3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last: tAOE, tACE, tAA or tBDD. 5. SEM = VIH. Timing of Power-Up / Power-Down CE 3190 drw 08 tPU ICC ISB tPD 50% 50% , |
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