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IDT7016L12JGB Datasheet(PDF) 9 Page - Integrated Device Technology |
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IDT7016L12JGB Datasheet(HTML) 9 Page - Integrated Device Technology |
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9 / 20 page  6.42 IDT7016S/L High-Speed 16K x 9 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges 9 APRIL 04, 2006 NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization but not production tested. 3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. 4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 5. 'X' in part numbers indicates power rating (S or L). AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(5) Symbol Parameter 7016X12 Com'l Only 7016X15 Com'l Only Unit Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 12 ____ 15 ____ ns tEW Chip Enable to End-of-Write(3) 10 ____ 12 ____ ns tAW Address Valid to End-of-Write 10 ____ 12 ____ ns tAS Address Set-up Time(3) 0 ____ 0 ____ ns tWP Write Pulse Width 10 ____ 12 ____ ns tWR Write Recovery Time 2 ____ 2 ____ ns tDW Data Valid to End-of-Write 10 ____ 10 ____ ns tHZ Output High-Z Time(1,2) ____ 10 ____ 10 ns tDH Data Hold Time(4) 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 10 ____ 10 ns tOW Output Active from End-of-Write(1,2,4) 3 ____ 3 ____ ns tSWRD SEM Flag Write to Read Time 5 ____ 5 ____ ns tSPS SEM Flag Contention Window 5 ____ 5 ____ ns 3190 tbl 13a Symbol Parameter 7016X20 Com'l, Ind & Military 7016X25 Com'l & Military 7016X35 Com'l & Military Unit Min. Max. Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 20 ____ 25 ____ 35 ____ ns tEW Chip Enable to End-of-Write(3) 15 ____ 20 ____ 30 ____ ns tAW Address Valid to End-of-Write 15 ____ 20 ____ 30 ____ ns tAS Address Set-up Time(3) 0 ____ 0 ____ 0 ____ ns tWP Write Pulse Width 15 ____ 20 ____ 25 ____ ns tWR Write Recovery Time 2 ____ 2 ____ 2 ____ ns tDW Data Valid to End-of-Write 15 ____ 15 ____ 15 ____ ns tHZ Output High-Z Time(1,2) ____ 12 ____ 15 ____ 20 ns tDH Data Hold Time(4) 0 ____ 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 12 ____ 15 ____ 20 ns tOW Output Active from End-of-Write(1,2,4) 3 ____ 3 ____ 3 ____ ns tSWRD SEM Flag Write to Read Time 5 ____ 5 ____ 5 ____ ns tSPS SEM Flag Contention Window 5 ____ 5 ____ 5 ____ ns 3190 tbl 13b |
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