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P4C198L-12LMB Datasheet(PDF) 4 Page - Pyramid Semiconductor Corporation |
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P4C198L-12LMB Datasheet(HTML) 4 Page - Pyramid Semiconductor Corporation |
4 / 13 page P4C198/198L, P4C198A/198AL Page 4 of 13 Document # SRAM113 REV A Sym. Parameter Unit -10 -12 -15 -20 -25 -35 -45 Min Max Min Max Min Max Min Max Min Max Min Max Min Max t RC Read Cycle Time 10 12 15 20 25 35 45 ns t AA Address Access 10 12 15 20 25 35 45 ns Time t AC Chip Enable 10 12 15 20 25 35 45 ns Access Time t OH Output Hold from 2 2 2222 2 ns Address Change t LZ Chip Enable to 2 2 2222 2 ns Output in Low Z t HZ Chip Disable to 6 7 8 10 10 14 15 ns Output in High Z t OE Output Enable 6 7 9 12 15 25 30 ns Low to Data Valid t OLZ Output Enable to 2 2 2222 2 ns Output in Low Z t OHZ Output Disable to 6 7 9 9 10 14 15 ns Output in High Z t PU Chip Enable to 0 0 0000 0 ns Power Up Time t PD Chip Disable to 10 12 15 20 25 35 45 ns Power Down Time AC CHARACTERISTICS—READ CYCLE (V CC = 5V ± 10%, All Temperature Ranges) (2) READ CYCLE NO.1 (OE OE OE OE OE controlled)(5) Notes: 5. WE is HIGH for READ cycle. |
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