NVD NVDX ARRAYS

NIGHT VISION

H.V. RECTIFIER DIODES & ARRAYS

Diode Specifications @

o

23 C

(Absolute Maximum Unless

Otherwise Specified)

NVDX Diode

(Standard Recovery)

NVD Diode

And Diode Arrays

(Fast Recovery)

PRV

1,000 Vdc

1,200 Vdc

I F

5.0mA

5.0mA

V

@ 1 mA d c

F

6.0 V

4.0 V

Junction Capacitance

0.35pF . @500 Vdc

I

@ 1,000 Vdc @ 23 C

R

0.5 nanoamperes

R

5.0 nanoamperes

I

@ 500 Vdc

R

1.0 nanoamperes typical

5.0 nanoamperes max.

R

25 nanoamperes

R

0.1 nanoamperes typical

0.25 nanoamperes max.

R

1.0 nanoamperes typical

2.0 nanoamperes max.

T

rr

50 ns typical

100 ns max.

o

o

-55 C to +100 C

o

o

-63 C to +125 C

o

o

-55 C to +100 C

o

o

-63 C to +125 C

O

O

O

O

O

EDI reserves the right to change these specifications at any time without notice.

These diodes and arrays have been specifically designed for use in night vision and image

intensifier equipment power supplies. They offer unusual characteristics that have not been

previously available. As a result of a proprietary EDI diffusion process, they feature small size

and a unique combination of extremely low leakage and ultra fast recovery time.

I

@ 1,000 Vdc @ 55 C

I

@ 500 Vdc @ 55 C

I

@ 250 Vdc @ 23 C

I

@ 250 Vdc @ 55 C

Temperature Range: Operating

Temperature Range: Storage