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RHC25-10 Datasheet(PDF) 1 Page - Electronic devices inc.

Part # RHC25-10
Description  HIGH VOLTAGE DIFFUSED SILICON RECTIFIERS
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Manufacturer  EDI [Electronic devices inc.]
Direct Link  http://www.edidiodes.com
Logo EDI - Electronic devices inc.

RHC25-10 Datasheet(HTML) 1 Page - Electronic devices inc.

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LHC
RHC
EDI reserves the right to change these specifications at any time without notice.
Max. Reverse Recovery Time , t rr (Fig.4)
100 nanosec
Max. DC Reverse Current @ PRV and 25
oC, IR
60
Storage Temperature Range, TSTG
A
1
Ambient Operating Temperature Range,TA
Max. DC Reverse Current @ PRV and 100
oC, IR
Amps
3
A
-55
to +125
oC
oC
-55
to +150
oC
oC
RHC SERIES
FAST
RECOVERY
ELECTRICAL CHARACTERISTICS
(at TA=25 C Unless Otherwise Specified)
Max.One-Half Cycle Surge Current, IFM
(Surge )@ 60Hz
Max. DC Reverse Current @ PRV and 25
oC, IR
40
Max.One-Half Cycle Surge Current, I FM
Storage Temperature Range, TSTG
A
1
Ambient Operating Temperature Range,TA
ELECTRICAL CHARACTERISTICS
(at TA=25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 100
oC, IR
Amps
3
A
-55
to +150
oC
oC
LHC SERIES
STANDARD
RECOVERY
(Surge )@ 60Hz
HIGH VOLTAGE DIFFUSED SILICON RECTIFIERS
EDI Type No.
Peak
Reve rse V olta ge
PRV (V olts )
Case Sty le
Max . Fwd. Volta ge
Drop at 25
o C And IO
VF (Vol ts)
LHC25-8
8, 000
10,0 00
12,0 00
15,0 00
20,0 00
30,0 00
35,0 00
40,0 00
SMALL SIZE MOLDED PACKAGE
PRV 8,000 TO 40,000 VOLTS
FAST RECOVERY (RHC SERIES)
LOW LEAKAGE
25,000
Avg.
Fwd. Current,
O
IO
at 50 C
25mA
-10
-1 2
-1 5
-2 0
-2 5
-3 0
-3 5
-4 0
30
30
30
60
60
60
90
90
90
A
A
A
B
B
B
C
C
C
A
A
A
B
B
B
C
C
C
30
30
30
60
60
60
90
90
90
8,000
10,0 00
12,0 00
15,0 00
20,0 00
30,0 00
35,0 00
40,0 00
25,0 00
RHC25-8
-1 0
-1 2
-1 5
-2 0
-2 5
-3 0
-3 5
-4 0
-55
to +150
oC
oC
NOTES:
1. Maximum lead and terminal temperature for soldering, 3/8 inch from case, 5 seconds at 250 C.
2. If operated over 10,000 v/inch in length, devices should be immersed in oil or re-encapsulated.
o


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