FTD1028

No.8741-1/4

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Semiconductors

DATA SHEET

92706PE MS IM TC-00000216

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

FTD1028

Features

•

Low ON-resistance.

•

2.5V drive.

•

Mounting height 1.1mm.

•

Composite type, facilitating high-density mounting.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--20

V

Gate-to-Source Voltage

VGSS

±10

V

Drain Current (DC)

ID

--3

A

Drain Current (Pulse)

IDP

PW

≤10µs, duty cycle≤1%

--15

A

Allowable Power Dissipation

PD

0.8

W

Total Power Dissipation

PT

1.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0V

--20

V

Zero-Gate Voltage Drain Current

IDSS

VDS=--20V, VGS=0V

--1

µA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VDS=0V

±10

µA

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--1mA

--0.4

--1.4

V

Forward Transfer Admittance

yfs

VDS=--10V, ID=--2A

3.8

6.3

S

RDS(on)1

ID=--2A, VGS=--4V

55

77

m

Ω

Static Drain-to-Source On-State Resistance

RDS(on)2

ID=--1A, VGS=--2.5V

81

113

m

Ω

Input Capacitance

Ciss

VDS=--10V, f=1MHz

900

pF

Output Capacitance

Coss

VDS=--10V, f=1MHz

125

pF

Reverse Transfer Capacitance

Crss

VDS=--10V, f=1MHz

115

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit.

16

ns

Rise Time

tr

See specified Test Circuit.

54

ns

Turn-OFF Delay Time

td(off)

See specified Test Circuit.

107

ns

Fall Time

tf

See specified Test Circuit.

82

ns

Marking : D1028

Continued on next page.

Ordering number : EN8741

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications