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CY7C1381FV25-133BGXI Datasheet(PDF) 9 Page - Cypress Semiconductor

Part # CY7C1381FV25-133BGXI
Description  18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1381FV25-133BGXI Datasheet(HTML) 9 Page - Cypress Semiconductor

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CY7C1381DV25, CY7C1381FV25
CY7C1383DV25, CY7C1383FV25
Document #: 38-05547 Rev. *E
Page 9 of 28
Truth Table [4, 5, 6, 7, 8]
Cycle Description
Address
Used
CE1 CE2 CE3 ZZ
ADSP
ADSC
ADV WRITE
OE
CLK
DQ
Deselected Cycle, Power
Down
None
H
X
X
L
X
L
X
X
X
L-H Tri-State
Deselected Cycle, Power
Down
None
L
L
X
L
L
X
X
X
X
L-H Tri-State
Deselected Cycle, Power
Down
None
L
X
H
L
L
X
X
X
X
L-H Tri-State
Deselected Cycle, Power
Down
None
L
L
X
L
H
L
X
X
X
L-H Tri-State
Deselected Cycle, Power
Down
None
X
X
X
L
H
L
X
X
X
L-H Tri-State
Sleep Mode, Power Down
None
X
X
X
H
X
X
X
X
X
X
Tri-State
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
L
L-H Q
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
H
L-H Tri-State
Write Cycle, Begin Burst
External
L
H
L
L
H
L
X
L
X
L-H D
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
L
L-H Q
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
H
L-H Tri-State
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L
L-H Q
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L-H Tri-State
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L-H Q
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L-H Tri-State
Write Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L-H D
Write Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L-H D
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H Q
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H Tri-State
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H Q
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H Tri-State
Write Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H D
Write Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H D
Notes
4. X = Don't Care, H = Logic HIGH, L = Logic LOW.
5. WRITE = L when any one or more byte write enable signals, and BWE = L or GW = L. WRITE = H when all byte write enable signals, BWE, GW = H.
6. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
7. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after
the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a don't
care for the remainder of the write cycle.
8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
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