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CY7C1382D-250BZI Datasheet(PDF) 6 Page - Cypress Semiconductor

Part # CY7C1382D-250BZI
Description  18-Mbit (512K x 36/1M x 18) Pipelined SRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1382D-250BZI Datasheet(HTML) 6 Page - Cypress Semiconductor

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CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Document #: 38-05543 Rev. *E
Page 6 of 30
Pin Definitions
Name
IO
Description
A0, A1, A
Input-
Synchronous
Address inputs used to select one of the address locations. Sampled at the rising edge of
the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 [2]are sampled active. A1: A0
are fed to the two-bit counter..
BWA, BWB
BWC, BWD
Input-
Synchronous
Byte write select inputs, active LOW. Qualified with BWE to conduct byte writes to the SRAM.
Sampled on the rising edge of CLK.
GW
Input-
Synchronous
Global write enable input, active LOW. When asserted LOW on the rising edge of CLK, a
global write is conducted (all bytes are written, regardless of the values on BWX and BWE).
BWE
Input-
Synchronous
Byte write enable input, active LOW. Sampled on the rising edge of CLK. This signal must be
asserted LOW to conduct a byte write.
CLK
Input-
Clock
Clock input. Used to capture all synchronous inputs to the device. Also used to increment the
burst counter when ADV is asserted LOW, during a burst operation.
CE1
Input-
Synchronous
Chip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
CE2 and CE3 to select or deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled
only when a new external address is loaded.
CE2 [2]
Input-
Synchronous
Chip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction
with CE1 and CE3 to select or deselect the device. CE2 is sampled only when a new external
address is loaded.
CE3 [2]
Input-
Synchronous
Chip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
CE1 and CE2 to select or deselect the device. CE3 is sampled only when a new external address
is loaded.
OE
Input-
Asynchronous
Output enable, asynchronous input, active LOW. Controls the direction of the IO pins. When
LOW, the IO pins behave as outputs. When deasserted HIGH, IO pins are tri-stated, and act as
input data pins. OE is masked during the first clock of a read cycle when emerging from a
deselected state.
ADV
Input-
Synchronous
Advance input signal, sampled on the rising edge of CLK, active LOW. When asserted, it
automatically increments the address in a burst cycle.
ADSP
Input-
Synchronous
Address strobe from processor, sampled on the rising edge of CLK, active LOW. When
asserted LOW, addresses presented to the device are captured in the address registers. A1: A0
are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is
recognized. ASDP is ignored when CE1 is deasserted HIGH.
ADSC
Input-
Synchronous
Address strobe from controller, sampled on the rising edge of CLK, active LOW. When
asserted LOW, addresses presented to the device are captured in the address registers. A1: A0
are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is
recognized.
ZZ
Input-
Asynchronous
ZZ sleep input. This active HIGH input places the device in a non-time critical sleep condition
with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ
pin has an internal pull down.
DQs, DQPX
IO-
Synchronous
Bidirectional data IO lines. As inputs, they feed into an on-chip data register that is triggered
by the rising edge of CLK. As outputs, they deliver the data contained in the memory location
specified by the addresses presented during the previous clock rise of the read cycle. The
direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs.
When HIGH, DQs and DQPX are placed in a tri-state condition.
VDD
Power Supply Power supply inputs to the core of the device.


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