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IDT71P73804 Datasheet(PDF) 11 Page - Integrated Device Technology |
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IDT71P73804 Datasheet(HTML) 11 Page - Integrated Device Technology |
11 / 25 page 6.42 11 IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit) 18 Mb DDR II SRAM Burst of 4 Commercial Temperature Range Absolute Maximum Ratings(1)(2) Symbol Rating Value Unit VTERM Supply Voltage on VDD with Respect to GND –0.5 to +2.9 V VTERM Supply Voltage on VDDQ with Respect to GND –0.5 to VDD+0.3 V VTERM Voltage on Input terminals with respect to GND –0.5 to VDD+0.3 V VTERM Voltage on Input, Output and I/O terminals with respect to GND –0.5 to VDDQ+0.3 V TBIAS Temperature Under Bias –55 to +125 °C TSTG Storage Temperature –65 to +150 °C IOUT Continuous Current into Outputs + 20 mA 6431 tbl 05 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functionaloperationofthedeviceattheseoranyotherconditionsabovethose indicatedintheoperationalsectionsofthisspecificationisnotimplied.Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VDDQ must not exceed VDD during normal operation. Capacitance (TA = +25°C, f = 1.0MHz)(1) Symbol Parameter Conditions Max. Unit CIN Input Capacitance VDD = 1.8V VDDQ = 1.5V 5pF CCLK Clock Input Capacitance 6 pF CO Output Capacitance 7 pF CDQ DQ I/O Capacitance 7 pF 6431 tbl 06 NOTE: 1. Tested at characterization and retested after any design or process change that may affect these parameters. Recommended DC Operating and Temperature Conditions Symbol Parameter Min. Typ. Max. Unit VDD Power Supply Voltage 1.7 1.8 1.9 V VDDQ I/O Supply Voltage 1.4 1.5 1.9 V VSS Ground 0 0 0 V VREF Input Reference Voltage 0.68 VDDQ/2 0.95 V TA Ambient Temperature (1) 025 70 o c 6431 tbl 04 NOTE: 1. During production testing, the case temperature equals the ambient temperature. |
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