6.42

11

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit)

18 Mb DDR II SRAM Burst of 4

Commercial Temperature Range

Symbol

Rating

Value

Unit

Respect to GND

–0.5 to +2.9

V

Respect to GND

V

Voltage on Input terminals with

respect to GND

V

Voltage on Input, Output and I/O

terminals with respect to GND

V

Temperature Under Bias

–55 to +125

°C

Storage Temperature

–65 to +150

°C

Continuous Current into Outputs

+ 20

mA

6431 tbl 05

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS

may cause permanent damage to the device. This is a stress rating only and

functionaloperationofthedeviceattheseoranyotherconditionsabovethose

indicatedintheoperationalsectionsofthisspecificationisnotimplied.Exposure

to absolute maximum rating conditions for extended periods may affect

reliability.

2. VDDQ must not exceed VDD during normal operation.

Symbol

Parameter

Conditions

Max.

Unit

Input Capacitance

5pF

Clock Input Capacitance

6

pF

Output Capacitance

7

pF

DQ I/O Capacitance

7

pF

6431 tbl 06

NOTE:

1. Tested at characterization and retested after any design or process change that

may affect these parameters.

Recommended DC Operating and

Temperature Conditions

Symbol

Parameter

Min.

Typ.

Max.

Unit

Power Supply Voltage

1.7

1.8

1.9

V

I/O Supply Voltage

1.4

1.5

1.9

V

Ground

0

0

0

V

Input Reference

Voltage

0.68

0.95

V

025

70

o

c

6431 tbl 04

NOTE:

1. During production testing, the case temperature equals the ambient

temperature.