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CY7C1392BV18-250BZI Datasheet(PDF) 7 Page - Cypress Semiconductor

Part # CY7C1392BV18-250BZI
Description  18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1392BV18-250BZI Datasheet(HTML) 7 Page - Cypress Semiconductor

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CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Document Number: 38-05623 Rev. *C
Page 7 of 27
Functional Overview
The CY7C1392BV18, CY7C1992BV18, CY7C1393BV18,
CY7C1394BV18 are synchronous pipelined Burst SRAMs
equipped with a DDR-II Separate I/O interface.
Accesses are initiated on the rising edge of the positive input
clock (K). All synchronous input timing is referenced from the
rising edge of the input clocks (K and K) and all output timing
is referenced to the rising edge of the output clocks, C/C (or
K/K when in single clock mode).
All synchronous data inputs (D[x:0]) pass through input
registers controlled by the rising edge of input clocks (K and
K). All synchronous data outputs (Q[x:0]) pass through output
registers controlled by the rising edge of the output clocks, C/C
(or K/K when in single clock mode). All synchronous control
(R/W, LD, BWS[x:0]) inputs pass through input registers
controlled by the rising edge of the input clock (K).
CY7C1393BV18 is described in the following sections. The
same
basic
descriptions
apply
to
CY7C1392BV18,
CY7C1992BV18, and CY7C1394BV18.
Read Operations
The CY7C1393BV18 is organized internally as two arrays of
1M x 18. Accesses are completed in a burst of two sequential
18-bit data words. Read operations are initiated by asserting
R/W HIGH and LD LOW at the rising edge of the positive input
clock (K). The address presented to the Address inputs is
stored in the Read address register. Following the next K clock
rise the corresponding lowest-order 18-bit word of data is
driven onto the Q[17:0] using C as the output timing reference.
On the subsequent rising edge of C the next 18-bit data word
is driven onto the Q[17:0]. The requested data will be valid
0.45 ns from the rising edge of the output clock (C or C, or K
or K when in single clock mode, for 250-MHz and 200-MHz
devices). Read accesses can be initiated on every K clock
rise. Doing so will pipeline the data flow such that data is trans-
ferred out of the device on every rising edge of the output
clocks, C/C (or K/K when in single clock mode).
When Read access is deselected, the CY7C1393BV18 will
first complete the pending Read transactions. Synchronous
internal circuitry will automatically tri-state the outputs
following the next rising edge of the positive output clock (C).
Write Operations
Write operations are initiated by asserting R/W LOW and LD
LOW at the rising edge of the positive input clock (K). On the
following K clock rise the data presented to D[17:0] is latched
and stored into the lower 18-bit Write Data register provided
BWS[1:0] are both asserted active. On the subsequent rising
edge of the negative input clock (K), the information presented
to D[17:0] is also stored into the Write Data register provided
BWS[1:0] are both asserted active. Write accesses can be
initiated on every rising edge of input clock (K). Doing so
pipelines the data flow so that 18 bits of data are written into
the device on every rising edge of both input clocks (K and K).
CQ
Echo Clock
CQ is referenced with respect to C. This is a free-running clock and is synchronized to the input
clock for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to
K. The timings for the echo clocks are shown in the AC Timing table.
ZQ
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system
data bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a
resistor connected between ZQ and ground. Alternately, this pin can be connected directly to
VDDQ, which enables the minimum impedance mode. This pin cannot be connected directly to
GND or left unconnected.
DOFF
Input
DLL Turn Off, active LOW. Connecting this pin to ground will turn off the DLL inside the device. The
timings in the DLL turned off operation will be different from those listed in this data sheet.
TDO
Output
TDO for JTAG.
TCK
Input
TCK pin for JTAG.
TDI
Input
TDI pin for JTAG.
TMS
Input
TMS pin for JTAG.
NC
N/A
Not connected to the die. Can be tied to any voltage level.
NC/36M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/72M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/144M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/288M
N/A
Not connected to the die. Can be tied to any voltage level.
VREF
Input-
Reference
Reference Voltage Input. Static input used to set the reference level for HSTL inputs and Outputs
as well as AC measurement points.
VDD
Power Supply Power supply inputs to the core of the device.
VSS
Ground
Ground for the device.
VDDQ
Power Supply Power supply inputs for the outputs of the device.
Pin Definitions (continued)
Pin Name
I/O
Pin Description
[+] Feedback
[+] Feedback


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