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PM75RLB120 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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PM75RLB120 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
3 / 9 page MITSUBISHI <INTELLIGENT POWER MODULES> PM75RLB120 FLAT-BASE TYPE INSULATED PACKAGE May 2005 2.3 2.4 3.5 2.5 0.8 1.0 3.0 1.2 1 10 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current –IC = 75A, VD = 15V, VCIN = 15V (Fig. 2) Tj = 25 °C Tj = 125 °C ELECTRICAL CHARACTERISTICS (Tj = 25 °C, unless otherwise noted) INVERTER PART Parameter Symbol Condition VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits — — — 0.5 — — — — — — 1.8 1.9 2.5 1.0 0.5 0.4 2.0 0.7 — — Tj = 25 °C Tj = 125 °C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 0V ↔15V VCC = 600V, IC = 75A Tj = 125 °C Inductive Load (Fig. 3,4) VCE = VCES, VCIN = 15V (Fig. 5) VD = 15V, IC = 75A VCIN = 0V (Fig. 1) V mA V µs Unit UP IGBT 28.3 –8.2 VP WP UN VN WN Br FWDi 28.3 2.0 IGBT 65.0 –8.2 FWDi 65.0 2.0 IGBT 87.0 –8.2 FWDi 87.0 2.0 IGBT 39.3 6.2 FWDi 39.3 –4.0 IGBT 54.0 6.2 FWDi 54.0 –4.0 IGBT 76.0 6.2 FWDi 76.0 –4.0 IGBT 18.1 –10.1 FWDi 18.0 5.6 arm axis X Y (Unit : mm) * If you use this value, Rth(f-a) should be measured just under the chips. (Note-1) TC (under the chip) measurement point is below. Bottom view 0.21* 0.30* 0.28* 0.45* 0.038 °C/W Rth(j-c)Q Rth(j-c)F Rth(j-c)Q Rth(j-c)F Rth(c-f) Inverter IGBT (per 1 element) (Note-1) Inverter FWDi (per 1 element) (Note-1) Brake IGBT (Note-1) Brake FWDi (Note-1) Case to fin, (per 1 module) Thermal grease applied (Note-1) Symbol Condition Unit Min. — — — — — — — — — — Junction to case Thermal Resistances THERMAL RESISTANCES Contact Thermal Resistance Parameter Limits Typ. Max. Parameter Symbol Supply Voltage Protected by SC Supply Voltage (Surge) Storage Temperature Isolation Voltage Condition VCC(surge) Tstg Viso Ratings VCC(PROT) 800 1000 –40 ~ +125 2500 Unit V °C Vrms V VD = 13.5 ~ 16.5V, Inverter Part, Tj = +125 °C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. TOTAL SYSTEM |
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