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CY7C1446AV33-167BGXC Datasheet(PDF) 6 Page - Cypress Semiconductor

Part # CY7C1446AV33-167BGXC
Description  36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1446AV33-167BGXC Datasheet(HTML) 6 Page - Cypress Semiconductor

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CY7C1440AV33
CY7C1442AV33
CY7C1446AV33
Document #: 38-05383 Rev. *E
Page 6 of 31
209-ball FBGA (14 x 22 x 1.76 mm) Pinout
CY7C1446AV33 (512K × 72)
Pin Configurations (continued)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
123456789
11
10
DQG
DQG
DQG
DQG
DQG
DQG
DQG
DQG
DQC
DQC
DQC
DQC
NC
DQPG
DQH
DQH
DQH
DQH
DQD
DQD
DQD
DQD
DQPD
DQPC
DQC
DQC
DQC
DQC
NC
DQH
DQH
DQH
DQH
DQPH
DQD
DQD
DQD
DQD
DQB
DQB
DQB
DQB
DQB
DQB
DQB
DQB
DQF
DQF
DQF
DQF
NC
DQPF
DQA
DQA
DQA
DQA
DQE
DQE
DQE
DQE
DQPA
DQPB
DQF
DQF
DQF
DQF
NC
DQA
DQA
DQA
DQA
DQPE
DQE
DQE
DQE
DQE
A
ADSP
ADV
A
NC
NC
NC/72M
AA
A
A
AA
AA
A
A1
A0
A
AA
AA
A
NC/144M
NC/288M
NC/576M
GW
NC
NC
BWSB
BWSF
BWSE
BWSA
BWSC
BWSG
BWSD
BWSH
TMS
TDI
TDO
TCK
NC
NC
MODE
NC
VSS
VSS
NC
CLK
NC
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC/1G
VDD
NC
OE
CE3
CE1
CE2
ADSC
BW
VSS
VSS
VSS
VSS
VSS
VSS
VSS
ZZ
VSS
VSS
VSS
VSS
NC
VDDQ
VSS
VSS
NC
VSS
VSS
VSS
VSS
VSS
VSS
NC
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
Pin Definitions
Name
I/O
Description
A0, A1, A
Input-
Synchronous
Address Inputs used to select one of the address locations. Sampled at the rising edge
of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3
[2]are sampled active.
A1: A0 are fed to the two-bit counter.
BWA, BWB,
BWC, BWD,
BWE, BWF,
BWG, BWH
Input-
Synchronous
Byte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes to the
SRAM. Sampled on the rising edge of CLK.
GW
Input-
Synchronous
Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK,
a global write is conducted (ALL bytes are written, regardless of the values on BWX and
BWE).
BWE
Input-
Synchronous
Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal
must be asserted LOW to conduct a byte write.
CLK
Input-
Clock
Clock Input. Used to capture all synchronous inputs to the device. Also used to increment
the burst counter when ADV is asserted LOW, during a burst operation.
CE1
Input-
Synchronous
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction
with CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is
sampled only when a new external address is loaded.
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