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CY14B104N-BV45XI Datasheet(PDF) 8 Page - Cypress Semiconductor

Part # CY14B104N-BV45XI
Description  4-Mbit (512K x 8/256K x 16) nvSRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY14B104N-BV45XI Datasheet(HTML) 8 Page - Cypress Semiconductor

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CY14B104L/CY14B104N
PRELIMINARY
Document #: 001-07102 Rev. *E
Page 8 of 21
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +150°C
Supply Voltage on VCC Relative to GND ......... –0.5V to 4.1V
Voltage Applied to Outputs
in High-Z State .......................................–0.5V to VCC + 0.5V
Input Voltage ............................................ –0.5V to Vcc+0.5V
Transient Voltage (<20 ns) on
Any Pin to Ground Potential ..................–2.0V to VCC + 2.0V
Package Power Dissipation
Capability (TA = 25°C) ................................................... 1.0W
Surface Mount Pb Soldering
Temperature (3 Seconds) .......................................... +260°C
Output Short Circuit Current [5].................................... 15 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ................................................... > 200 mA
Operating Range
Range
Ambient Temperature
VCC
Commercial
0°C to +70°C
2.7V to 3.6V
Industrial
–40°C to +85°C
2.7V to 3.6V
Above table contains advanced information.
DC Electrical Characteristics
Over the Operating Range (VCC = 2.7V to 3.6V)
Parameter
Description
Test Conditions
Min
Max
Unit
ICC1
Average VCC Current
tAVAV = 15 ns
tAVAV = 25 ns
tAVAV = 45 ns
Dependent on output loading and cycle
rate.Values obtained without output loads.
IOUT = 0 mA
Commercial
70
65
50
mA
mA
mA
Industrial
75
70
52
mA
mA
mA
ICC2
Average VCC Current
during STORE
All Inputs Don’t Care, VCC = Max
Average current for duration tSTORE
3
mA
ICC3
Average VCC Current at
tAVAV = 200 ns, 3V,
25°C typical
WE > (VCC – 0.2). All other I/P cycling.
Dependent on output loading and cycle rate. Values obtained
without output loads.
25
mA
ICC4
Average VCAP Current
during AutoStore Cycle
All Inputs Don’t Care, VCC = Max
Average current for duration tSTORE
3
mA
ISB
VCC Standby Current
CE > (VCC – 0.2). All others VIN < 0.2V or > (VCC – 0.2V).
Standby current level after nonvolatile cycle is complete.
Inputs are static. f = 0 MHz.
1
mA
IIX
Input Leakage Current VCC = Max, VSS < VIN < VCC
–1
+1
µA
IOZ
Off-State Output
Leakage Current
VCC = Max, VSS < VIN < VCC, CE or OE > VIH
–1
+1
µA
VIH
Input HIGH Voltage
2.0
VCC + 0.5 V
VIL
Input LOW Voltage
VCC – 0.5
0.8
V
VOH
Output HIGH Voltage
IOUT = –2 mA
2.4
V
VOL
Output LOW Voltage
IOUT = 4 mA
0.4
V
VCAP
Storage Capacitor
Between VCAP pin and VSS, 5V Rated
35
57
µF
Capacitance [7]
Parameter
Description
Test Conditions
Max
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 0 to 3.0V
7
pF
COUT
Output Capacitance
7
pF
Notes
5. Outputs shorted for no more than one second. No more than one output shorted at a time.
6. Typical conditions for the active current shown on the front page of the data sheet are average values at 25°C (room temperature), and VCC = 3V. Not 100% tested.
7. These parameters are guaranteed but not tested.
[6]
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