CY62138EV30
MoBL®
Document #: 38-05577 Rev. *A
Page 3 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................... 55°C to +125°C
Supply Voltage to Ground
Potential ........................................ –0.3V to VCC(MAX) + 0.3V
DC Voltage Applied to Outputs
in High-Z State[4,5]......................... –0.3V to VCC(MAX) + 0.3V
DC Input Voltage[4,5]...................... –0.3V to VCC(MAX) + 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... > 200 mA
Product
Range
Ambient
Temperature
VCC
[6]
CY62138EV30LL
Industrial –40°C to +85°C
2.2V to
3.6V
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
CY62138EV30-45
Unit
Min.
Typ.[3]
Max.
VOH
Output HIGH Voltage IOH = –0.1
mA
VCC = 2.20V
2.0
V
IOH = –1.0
mA
VCC = 2.70V
2.4
V
VOL
Output LOW Voltage
IOL = 0.1 mA VCC = 2.20V
0.4
V
IOL = 2.1 mA VCC = 2.70V
0.4
V
VIH
Input HIGH Voltage
VCC = 2.2V to 2.7V
1.8
VCC + 0.3V
V
VCC= 2.7V to 3.6V
2.2
VCC + 0.3V
V
VIL
Input LOW Voltage
VCC = 2.2V to 2.7V
–0.3
0.6
V
VCC= 2.7V to 3.6V
–0.3
0.8
V
IIX
Input Leakage
Current
GND < VI < VCC
–1
+1
µA
IOZ
Output Leakage
Current
GND < VO < VCC,
Output Disabled
–1
+1
µA
ICC
VCC Operating
Supply Current
f = fMAX =
1/tRC
VCC = VCCmax
IOUT = 0 mA
CMOS levels
15
20
mA
f = 1 MHz
2
2.5
mA
ISB1
Automatic CE
Power-down
Current — CMOS
Inputs
CE > VCC – 0.2V, VIN > VCC – 0.2V,
VIN < 0.2V), f = fMAX (Address and
Data Only), f = 0 (OE, and WE),
VCC = 3.60V
17
µA
ISB2
Automatic CE
Power-down
Current — CMOS
Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = 3.60V
17
µA
Capacitance for all packages[7]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = VCC(typ.)
10
pF
COUT
Output Capacitance
10
pF
Notes:
4. VIL(min.) = –2.0V for pulse durations less than 20 ns.
5. VIH(max) = VCC+0.75V for pulse durations less than 20 ns.
6. Full device AC operation assumes a 100
µs ramp time from 0 to V
CC(min.) and 200 µs wait time after VCC stabilization.
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