CY62157CV30/33
Document #: 38-05014 Rev. *F
Page 3 of 13
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground Potential ...–0.5V to Vccmax + 0.5V
DC Voltage Applied to Outputs
in High-Z State[5] ....................................–0.5V to VCC + 0.3V
DC Input Voltage[5].................................–0.5V to VCC + 0.3V
Output Current into Outputs (LOW) .............................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
[TA]
[6]
VCC
CY62157CV30 Automotive-E –40°C to +125°C 2.7V – 3.3V
CY62157CV33 Automotive-A –40°C to +85°C 3.0V – 3.6V
Automotive-E –40°C to +125°C
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
CY62157CV30-70
Unit
Min.
Typ.[2]
Max.
VOH
Output HIGH Voltage IOH = –1.0 mA
VCC = 2.7V
2.4
V
VOL
Output LOW Voltage
IOL = 2.1 mA
VCC = 2.7V
0.4
V
VIH
Input HIGH Voltage
2.2
VCC + 0.3V
V
VIL
Input LOW Voltage
–0.3
0.8
V
IIX
Input Leakage
Current
GND < VI < VCC
–10
+10
µA
IOZ
Output Leakage
Current
GND < VO < VCC, Output Disabled
–10
+10
µA
ICC
VCC Operating
Supply
Current
f = fMAX = 1/tRC
VCC = 3.3V
IOUT = 0 mA
CMOS Levels
715
mA
f = 1 MHz
1.5
3
ISB1
Automatic CE
Power-Down
Current— CMOS
Inputs
CE1 > VCC – 0.2V or CE2 < 0.2V
VIN > VCC – 0.2V or VIN < 0.2V,
f = fmax (Address and Data Only),
f=0 (OE, WE, BHE and BLE)
870
µA
ISB2
Automatic CE
Power-Down
Current—CMOS
Inputs
CE1 > VCC – 0.2V or CE2 < 0.2V
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = 3.3V
870
µA
Notes:
5. VIL(min.) = –2.0V for pulse durations less than 20 ns.
6. TA is the “Instant-On” case temperature.
[+] Feedback
[+] Feedback