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MCH3416 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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MCH3416 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 4 page MCH3416 No.7996-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Total Gate Charge Qg VDS=30V, VGS=10V, ID=1.8A 6.4 nC Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=1.8A 1.1 nC Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=1.8A 1.1 nC Diode Forward Voltage VSD IS=1.8A, VGS=0 0.85 1.2 V Package Dimensions Switching Time Test Circuit unit : mm 2167A 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 2.0 0.65 0.3 0.15 1 2 3 12 3 (Bottom view) (Top view) PW=10 µs D.C. ≤1% P.G 50 Ω G S D ID=0.9A RL=33.3Ω VDD=30V VOUT MCH3416 VIN 10V 0V VIN ID -- VDS ID -- VGS Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS RDS(on) -- Ta Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C 1.0 1.5 4.0 0.5 2.0 2.5 3.0 3.5 0 0 0.2 0.4 0.6 1.2 1.8 1.6 1.4 1.0 0.8 0 1.2 1.0 0.8 0.2 0.4 0.6 IT07434 0 0.5 1.0 1.5 2.0 2.5 4.0 3.0 3.5 IT07435 IT07437 02 4 6 8 20 10 12 14 16 18 IT07436 400 100 200 150 250 350 300 Ta=25 °C ID=0.9A 3.0V VGS=2.5V VDS=10V --60 50 100 300 350 200 250 150 400 --40 --20 0 20 40 60 80 100 120 140 160 I D =0.9A, V GS =4V I D =0.9A, V GS =10V |
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