MCH6628

No.7919-1/6

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

N-channel

P-channel

Unit

Drain-to-Source Voltage

VDSS

30

--20

V

Gate-to-Source Voltage

VGSS

±10

±10

V

Drain Current (DC)

ID

0.35

--1.0

A

Drain Current (Pulse)

IDP

PW

≤10µs, duty cycle≤1%

1.4

--4.0

A

Allowable Power Dissipation

PD

0.8

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

[N-channel]

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0

30

V

Zero-Gate Voltage Drain Current

IDSS

VDS=30V, VGS=0

10

µA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VDS=0

±10

µA

Cutoff Voltage

VGS(off)

VDS=10V, ID=100µA

0.4

1.3

V

Forward Transfer Admittance

yfs

VDS=10V, ID=80mA

130

220

mS

RDS(on)1

ID=80mA, VGS=4V

2.9

3.7

Ω

Static Drain-to-Source On-State Resistance

RDS(on)2

ID=40mA, VGS=2.5V

3.7

5.2

Ω

RDS(on)3

ID=10mA, VGS=1.5V

6.4

12.8

Ω

Marking : WC

Continued on next page.

Features

•

The MCH6628 incorporates an N-channel MOSFET

and a P-channel MOSFET that feature low ON-

resistance and high-speed switching, thereby enabling

high-density mounting.

•

Excellent ON-resistance characteristic.

•

2.5V drive.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN7919

MCH6628

Package Dimensions

unit : mm

2173A

[MCH6628]

GI IM

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

N-Channel and P-Channel Silicon MOSFETs

General-Purpose Switching Device Applications

1 : Source1

2 : Gate1

3 : Drain2

4 : Source2

5 : Gate2

6 : Drain1

SANYO : MCPH6

2.0

0.65

0.3

0.15

1

12

3

65

4

32

5

46

(Bottom view)

(Top view)

93004 TS IM TA-100978