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BD543A Datasheet(PDF) 2 Page - Power Innovations Ltd |
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BD543A Datasheet(HTML) 2 Page - Power Innovations Ltd |
2 / 6 page BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS 2 JUNE 1973 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA (see Note 4) IB = 0 BD543 BD543A BD543B BD543C 40 60 80 100 V ICES Collector-emitter cut-off current VCE = 40 V VCE = 60 V VCE = 80 V VCE = 100 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 BD543 BD543A BD543B BD543C 0.4 0.4 0.4 0.4 mA ICEO Collector cut-off current VCE = 30 V VCE = 60 V IB = 0 IB = 0 BD543/543A BD543B/543C 0.7 0.7 mA IEBO Emitter cut-off current VEB = 5 V IC = 0 1 mA hFE Forward current transfer ratio VCE = 4 V VCE = 4 V VCE = 4 V IC = 1 A IC = 3 A IC = 5 A (see Notes 4 and 5) 60 40 15 VCE(sat) Collector-emitter saturation voltage IB = 0.3 A IB = 1 A IB = 1.6 A IC = 3 A IC = 5 A IC = 8 A (see Notes 4 and 5) 0.5 0.5 1 V VBE Base-emitter voltage VCE = 4 V IC = 5 A (see Notes 4 and 5) 1.4 V hfe Small signal forward current transfer ratio VCE = 10 V IC = 0.5 A f = 1 kHz 20 |h fe| Small signal forward current transfer ratio VCE = 10 V IC = 0.5 A f = 1 MHz 3 thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.79 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn-on time IC = 6 A VBE(off) = -4 V IB(on) = 0.6 A RL = 5 Ω IB(off) = -0.6 A tp = 20 µs, dc ≤ 2% 0.6 µs toff Turn-off time 1 µs |
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