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BD745A Datasheet(PDF) 2 Page - Power Innovations Ltd |
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BD745A Datasheet(HTML) 2 Page - Power Innovations Ltd |
2 / 6 page BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS 2 AUGUST 1978 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA IB = 0 (see Note 5) BD745 BD745A BD745B BD745C 45 60 80 100 V ICBO Collector cut-off current VCE = 50 V VCE = 70 V VCE = 90 V VCE = 110 V VCE = 50 V VCE = 70 V VCE = 90 V VCE = 110 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 TC = 125°C TC = 125°C TC = 125°C TC = 125°C BD745 BD745A BD745B BD745C BD745 BD745A BD745B BD745C 0.1 0.1 0.1 0.1 5 5 5 5 mA ICEO Collector cut-off current VCE = 30 V VCE = 60 V IB = 0 IB = 0 BD745/745A BD745B/745C 0.1 0.1 mA IEBO Emitter cut-off current VEB = 5 V IC = 0 0.5 mA hFE Forward current transfer ratio VCE = 4 V VCE = 4 V VCE = 4 V IC = 1 A IC = 5 A IC = 20 A (see Notes 5 and 6) 40 20 5 150 VCE(sat) Collector-emitter saturation voltage IB = 0.5 A IB = 5 A IC = 5 A IC = 20 A (see Notes 5 and 6) 1 3 V VBE Base-emitter voltage VCE = 4 V VCE = 4 V IC = 5 A IC = 20 A (see Notes 5 and 6) 1 3 V hfe Small signal forward current transfer ratio VCE = 10 V IC = 1 A f = 1 kHz 25 |h fe| Small signal forward current transfer ratio VCE = 10 V IC = 1 A f = 1 MHz 5 thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.1 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT td Delay time IC = 5 A VBE(off) = -4.2 V IB(on) = 0.5 A RL = 6 Ω IB(off) = -0.5 A tp = 20 µs, dc ≤ 2% 20 ns tr Rise time 350 ns ts Storage time 500 ns tf Fall time 400 ns |
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