VEC2819 datasheet(3/6 Pages) SANYO

Part #	VEC2819

Description	MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

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Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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3 / 6 page

VEC2819

No. A0536-3/6

Switching Time Test Circuit

trr Test Circuit

[MOSFET]

[SBD]

PW=10µs

D.C.≤1%

P.G

50Ω

G

S

D

ID= --2A

RL=5Ω

VDD= --10V

VOUT

VEC2819

VIN

0V

--4.5V

VIN

Duty≤10%

50Ω

100Ω

10Ω

--5V

trr

10µs

0

--0.5

--1.0

--2.0

--2.5

--3.0

--3.5

--4.0

--0.2

--1.5

--0.4

--0.6

--0.8

--1.0

--0.1

--0.3

--0.5

--0.7

--0.9

0

--0.4

--0.8

--1.2

--1.6

--2.0

--0.2

--0.6

--1.0

--1.4

--1.8

ID -- VDS

0

--1

--3

--4

--2

--5

--6

--7

ID -- VGS

IT11954

IT06417

VDS= --10V

Drain-to-Source Voltage, VDS -- V

Gate-to-Source Voltage, VGS -- V

0

20

40

60

160

100

80

140

120

RDS(on) -- VGS

IT11827

--2

--1

--4

--6

--8

--10

0--3

--5

--7

--9

Gate-to-Source Voltage, VGS -- V

IT11828

RDS(on) -- Tc

Case Temperature, Tc --

°C

[MOSFET]

ID= --0.3A

--2.0A

Ta=25

°C

VGS= --1.5V

--2.0V

--1.8V

--60

20

--40

--20

0

20

60

40

80

100

140

120

160

40

100

120

140

80

60

160

ID=

--2.0

A, VGS

= --4.5V

I D

= --1.0

A, V

GS

= --

2.5V

ID=

--0.3

A, VGS

= --

1.8V

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