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BULD25SL Datasheet(PDF) 4 Page - Power Innovations Ltd

Part # BULD25SL
Description  NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
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Manufacturer  POINN [Power Innovations Ltd]
Direct Link  http://www.bourns.com
Logo POINN - Power Innovations Ltd

BULD25SL Datasheet(HTML) 4 Page - Power Innovations Ltd

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BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
4
JULY 1994 - REVISED SEPTEMBER 1997
PRODUCT
INFORMATION
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
Figure 5.
Figure 6.
Figure 7.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE - Collector-Emitter Voltage - V
1·0
10
100
1000
0·01
0·1
1·0
10
LDX25DFB
t
p = 100 µs
t
p =
10 ms
t
p =
1 s
BULD25D
T
A = 25°C
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE - Collector-Emitter Voltage - V
1·0
10
100
1000
0·01
0·1
1·0
10
LDX25SFB
t
p = 100 µs
t
p =
10 ms
t
p =
1 s
BULD25SL
T
A = 25°C
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
V
CE - Collector-Emitter Voltage - V
0
100
200
300
400
500
600
700
800
0
1
2
3
4
5
LDX25DRB
BULD25D
I
B(on)
= I
C / 5
V
BE(off) = -5 V
T
A
= 25°C
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
V
CE - Collector-Emitter Voltage - V
0
100
200
300
400
500
600
700
800
0
1
2
3
4
5
LDX25SRB
BULD25SL
I
B(on)
= I
C / 5
V
BE(off) = -5 V
T
A
= 25°C


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