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TIC106S Datasheet(PDF) 1 Page - Power Innovations Ltd |
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TIC106S Datasheet(HTML) 1 Page - Power Innovations Ltd |
1 / 8 page TIC106 SERIES SILICON CONTROLLED RECTIFIERS PRODUCT INFORMATION 1 APRIL 1971 - REVISED MARCH 1997 Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. q 5 A Continuous On-State Current q 30 A Surge-Current q Glass Passivated Wafer q 400 V to 800 V Off-State Voltage q Max IGT of 200 µA K A G TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC1ACA 1 2 3 absolute maximum ratings over operating case temperature (unless otherwise noted) NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate linearly to zero at 110°C. 4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms. RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage (see Note 1) TIC106D TIC106M TIC106S TIC106N VDRM 400 600 700 800 V Repetitive peak reverse voltage TIC106D TIC106M TIC106S TIC106N VRRM 400 600 700 800 V Continuous on-state current at (or below) 80°C case temperature (see Note 2) IT(RMS) 5 A Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3) IT(AV) 3.2 A Surge on-state current (see Note 4) ITM 30 A Peak positive gate current (pulse width ≤ 300 µs) IGM 0.2 A Peak gate power dissipation (pulse width ≤ 300 µs) PGM 1.3 W Average gate power dissipation (see Note 5) PG(AV) 0.3 W Operating case temperature range TC -40 to +110 °C Storage temperature range Tstg -40 to +125 °C Lead temperature 1.6 mm from case for 10 seconds TL 230 °C |
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