TIC106S datasheet(1/8 Pages) POINN

Part #	TIC106S

Description	SILICON CONTROLLED RECTIFIERS

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Manufacturer	POINN [Power Innovations Ltd]

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TIC106 SERIES

SILICON CONTROLLED RECTIFIERS

PRODUCT

INFORMATION

1

APRIL 1971 - REVISED MARCH 1997

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

q

5 A Continuous On-State Current

q

30 A Surge-Current

q

Glass Passivated Wafer

q

400 V to 800 V Off-State Voltage

q

Max IGT of 200 µA

K

A

G

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

1

2

3

absolute maximum ratings

over operating case temperature (unless otherwise noted)

NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ.

2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.

3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate

linearly to zero at 110°C.

4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

5. This value applies for a maximum averaging time of 20 ms.

RATING

SYMBOL

VALUE

UNIT

Repetitive peak off-state voltage (see Note 1)

TIC106D

TIC106M

TIC106S

TIC106N

VDRM

400

600

700

800

V

Repetitive peak reverse voltage

TIC106D

TIC106M

TIC106S

TIC106N

VRRM

400

600

700

800

V

Continuous on-state current at (or below) 80°C case temperature (see Note 2)

IT(RMS)

5

A

Average on-state current (180° conduction angle) at (or below) 80°C case temperature

(see Note 3)

IT(AV)

3.2

A

Surge on-state current (see Note 4)

ITM

30

A

Peak positive gate current (pulse width

≤ 300 µs)

IGM

0.2

A

Peak gate power dissipation (pulse width

≤ 300 µs)

PGM

1.3

W

Average gate power dissipation (see Note 5)

PG(AV)

0.3

W

Operating case temperature range

TC

-40 to +110

°C

Storage temperature range

Tstg

-40 to +125

°C

Lead temperature 1.6 mm from case for 10 seconds

TL

230

°C

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