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AR35 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # AR35
Description  35.0 AMPS. High Current Button Rectifiers
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

AR35 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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Dimensions in inches and (millimeters)
Version: A06
AR(S)35 SERIES
35.0 AMPS. High Current Button Rectifiers
ARS
AR
Features
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Low cost construction utilizing void-free molded
plastic technique
Low cost
Diffused junction
Low leakage
High surge capability
High temperature soldering guaranteed:
260
oC for 10 seconds
Mechanical Data
Case: Molded plastic case
Terminals:
Pure tin plated, lead free., solderable
per MIL-STD-202, Method 208
Polarity: Color ring denotes cathode
Weight: 0.07 ounce, 1.8 grams
Mounting position: Any
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
ARS
35A
ARS
35B
ARS
35D
ARS
35G
ARS
35J
ARS
35K
ARS
35M
Type Number
Symbol
AR
35A
AR
35B
AR
35D
AR
35G
AR
35J
AR
35K
AR
35M
Units
Maximum Recurrent Peak Revere Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
@Tc = 150
oC
I(AV)
35
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method ) at TJ=150
oC
IFSM
500
A
Maximum Instantaneous Forward Voltage
@ 35A
VF
1.0
V
Maximum DC Reverse Current @ Tc=25
oC
at Rated DC Blocking Voltage @ Tc=125
oC
IR
5.0
250
uA
uA
Typical Reverse Recovery Time (Note 2)
Trr
3.0
uS
Typical Junction Capacitance ( Note 1 )
TJ=25
oC
Cj
300
pF
Typical Thermal Resistance ( Note 3 )
RθJC
1.0
oC/W
Operating and Storage Temperature Range
TJ, TSTG
-50 to +175
oC
Notes:
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, Singe Side Cooled.


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