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SST36VF1601-90-4C-BK Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST36VF1601-90-4C-BK Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 26 page 1 16 Megabit Concurrent SuperFlash SST36VF1601 / SST36VF1602 Advance Information 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 © 2000 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. Concurrent SuperFlash is a trademark of Silicon Storage Technology, Inc. 373-3 11/00 S71142 These specifications are subject to change without notice. FEATURES: • Organized as 1M x16 • Dual-Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection - SST36VF1601: 12 Mbit + 4 Mbit – 16 Mbit Top Sector Protection - SST36VF1602: 4 Mbit + 12 Mbit • Single 2.7-3.6V Read and Write Operations • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 25 mA (typical) – Standby Current: 4 µA (typical) – Auto Low Power Mode: 4 µA (typical) • Hardware Sector Protection/WP# Input Pin – Protects 4 outer most sectors (4 KWord) in the larger bank by driving WP# low and unprotects by driving WP# high • Hardware Reset Pin (RESET#) – Resets the internal state machine to reading data array • Sector-Erase Capability – Uniform 1 KWord sectors • Block-Erase Capability – Uniform 32 KWord blocks • Read Access Time – 70 and 90 ns • Latched Address and Data • Fast Erase and Word-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Word-Program Time: 14 µs (typical) – Chip Rewrite Time: 8 seconds (typical) • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling – Ready/Busy# pin • CMOS I/O Compatibility • Conforms to Common Flash Memory Interface (CFI) • JEDEC Standards – Flash EEPROM Pinouts and command sets • Packages Available – 48-Pin TSOP (12mm x 20mm) – 48-Ball TFBGA (8mm x 10mm) PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s pro- prietary, high performance CMOS SuperFlash technol- ogy. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability com- pared with alternate approaches.The SST36VF1601/ 1602 write (Program or Erase) with a 2.7-3.6V power supply. The SST36VF1601/1602 devices conform to JEDEC standard pinouts for x16 memories. Featuring high performance Word-Program, the SST36VF1601/1602 devices provide a typical Word-Pro- gram time of 14 µsec. The devices use Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To protect against inadvertent write, the SST36VF1601/1602 devices have on-chip hardware and Software Data Protection schemes. Designed, manufac- tured, and tested for a wide spectrum of applications, the SST36VF1601/1602 devices are offered with a guaran- teed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST36VF1601/1602 are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applica- tions, the SST36VF1601/1602 significantly improve per- formance and reliability, while lowering power consump- tion. The SST36VF1601/1602 inherently use less energy during Erase and Program than alternative flash technolo- gies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. The SST36VF1601/1602 also improve flexibility while lower- ing the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/ Program cycles that have occurred. Therefore the sys- tem software or hardware does not have to be modified or de-rated as is necessary with alternative flash technolo- |
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