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AR25M Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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AR25M Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  Dimensions in inches and (millimeters) Version: A06 Features Plastic material used carries Underwriters Laboratory Classification 94V-0 Low cost construction utilizing void-free molded plastic technique Low cost Diffused junction Low leakage High surge capability High temperature soldering guaranteed: 260 oC for 10 seconds Mechanical Data Case: Molded plastic case Terminals: Pure tin plated, lead free., solderable per MIL-STD-202, Method 208 Polarity: Color ring denotes cathode Weight: 0.07 ounce, 1.8 grams Mounting position: Any Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% ARS 25A ARS 25B ARS 25D ARS 25G ARS 25J ARS 25K ARS 25M Type Number Symbol AR 25A AR 25B AR 25D AR 25G AR 25J AR 25K AR 25M Units Maximum Recurrent Peak Revere Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current @Tc = 150 oC I(AV) 25 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) at TJ=150 oC IFSM 400 A M aximum Instantaneous Forward Voltage @ 25A VF 1.0 V Maximum DC Reverse Current @ Tc=25 oC at Rated DC Blocking Voltage @ Tc=125 oC IR 5.0 250 uA uA Typical Reverse Recovery Time (Note 2) Trr 3.0 uS Typical Junction Capacitance ( Note 1 ) TJ=25 oC Cj 300 pF Typical Thermal Resistance ( Note 3 ) RθJC 1.0 oC/W Operating and Storage Temperature Range TJ, TSTG -50 to +175 oC Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 3. Thermal Resistance from Junction to Case, Singe Side Cooled. AR(S)25 SERIES 25.0 AMPS. High Current Button Rectifiers ARS AR |
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