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R1152N031B Datasheet(PDF) 4 Page - RICOH electronics devices division |
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R1152N031B Datasheet(HTML) 4 Page - RICOH electronics devices division |
4 / 21 page R1152N 4 ELECTRICAL CHARACTERISTICS • R1152NxxxB Topt =25°C Symbol Item Conditions Min. Typ. Max. Unit VOUT Output Voltage VIN =Set VOUT+1V IOUT =100mA ×0.980 ×1.020 V IOUT Output Current Refer to the specification Table Note1 1 A ∆VOUT/∆IOUT Load Regulation VIN =Set VOUT+1V 1mA < = IOUT < = 100mA VDIF Dropout Voltage IOUT =300mA Refer to the specification table by output voltage ISS Supply Current VIN =Set VOUT+1V, IOUT=0mA 10 24 µA Istandby Supply Current (Standby) VIN =18V,CE=0V 0.1 1.0 µA IEXTleak EXT Leakage Current 0.1 µA ∆VOUT/∆VIN Line Regulation Set VOUT +0.5V < = VIN < = 18.0V IOUT =100mA 0.01 0.10 %/V VIN Input Voltage 18 V Ilim Current Limit Refer to the specification Table Base Current IB of PNP Tr. 10 25 mA IRPT Short Current Limit Base Current IB of PNP Tr. VOUT =0V 600 µA ∆VOUT/ ∆Topt Output Voltage Temperature Coefficient IOUT =100mA −40°C < = Topt < = 105°C ±50 ppm / °C VCEH CE Input Voltage "H" 2.0 VIN µA VCEL CE Input Voltage "L" 0.0 0.5 V Note1: This item depends on the capability of external PNP transistor. Use low saturation type transistor with hFE value range of 100 to 300. |
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