BH62UV4000EIG55 datasheet(3/12 Pages) BSI

Part #	BH62UV4000EIG55

Description	Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit

Download	12 Pages

Scroll/Zoom	100%

Manufacturer	BSI [Brilliance Semiconductor]

Direct Link

Logo

3 / 12 page

BH62UV4000

R0201-BH62UV4000

Revision

1.2

Aug.

2006

3

n DC ELECTRICAL CHARACTERISTICS (T

A = -40

OC to +85OC)

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN.

TYP.

(1)

MAX.

UNITS

VCC

Power Supply

1.65

--

3.6

V

VCC=1.8V

0.4

VIL

Input Low Voltage

VCC=3.6V

-0.3

(2)

--

0.8

V

VCC=1.8V

1.4

VIH

Input High Voltage

VCC=3.6V

2.2

--

VCC+0.3

(3)

V

IIL

Input Leakage Current

VIN = 0V to VCC,

CE = VIH

--

1

uA

ILO

Output Leakage Current

VI/O = 0V to VCC

,

CE = VIH or OE = VIH

--

1

uA

VCC = Max, IOL = 0.1mA

VCC=1.8V

0.2

VOL

Output Low Voltage

VCC = Max, IOL = 2.0mA

VCC=3.6V

--

0.4

V

VCC = Min, IOH = -0.1mA

VCC=1.8V

VCC-0.2

VOH

Output High Voltage

VCC = Min, IOH = -1.0mA

VCC=3.6V

2.4

--

V

VCC=1.8V

8

ICC

Operating Power Supply

Current

CE = VIL,

IDQ = 0mA, f = FMAX

(4)

VCC=3.6V

--

10

mA

VCC=1.8V

1.0

1.5

ICC1

Operating Power Supply

Current

CE = VIL,

IDQ = 0mA, f = 1MHz

VCC=3.6V

--

1.5

2.0

mA

VCC=1.8V

0.5

ICCSB

Standby Current

– TTL

CE = VIH,

IDQ = 0mA

VCC=3.6V

--

1.0

mA

VCC=1.8V

2.0

10

ICCSB1

Standby Current

– CMOS

CE≧VCC-0.2V,

VIN≧VCC-0.2V or VIN≦0.2V

VCC=3.6V

--

2.0

(5)

10

uA

1. Typical characteristics are at TA=25

OC and not 100% tested.

2. Undershoot: -1.0V in case of pulse width less than 20 ns.

3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.

4. FMAX=1/tRC.

5. VCC=3.0V

n DATA RETENTION CHARACTERISTICS (T

A = -40

OC to +85OC)

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP.

(1)

MAX.

UNITS

VDR

VCC for Data Retention

CE≧VCC-0.2V,

VIN≧VCC-0.2V or VIN≦0.2V

1.0

--

V

ICCDR

Data Retention Current

CE≧VCC-0.2V,

VIN≧VCC-0.2V or VIN≦0.2V

VCC=1.2V

--

1.0

5.0

uA

tCDR

Chip Deselect to Data

Retention Time

0

--

ns

tR

Operation Recovery Time

See Retention Waveform

tRC

(2)

--

ns

1. Typical characteristics are at TA=25

OC and not 100% tested.

2. tRC = Read Cycle Time.

n LOW V

CC DATA RETENTION WAVEFORM (1) (CE Controlled)

Data Retention Mode

VCC

tCDR

VCC

tR

VIH

CE≧VCC - 0.2V

VDR≧1.0V

CE

VCC

Similar Part No. - BH62UV4000EIG55

Manufacturer	Part #	Datasheet	Description
Brilliance Semiconducto...	BH62UV1600	123Kb / 9P	Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit
	BH62UV1600AI	123Kb / 9P	Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit
	BH62UV1600AI-70	123Kb / 9P	Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit
	BH62UV1600AIG55	148Kb / 9P	Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit
	BH62UV1600AIG70	123Kb / 9P	Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit

More results

Similar Description - BH62UV4000EIG55

Manufacturer	Part #	Datasheet	Description
Brilliance Semiconducto...	BH616UV8011	152Kb / 10P	Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
	BH616UV8011	238Kb / 11P	Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
	BH616UV8010	138Kb / 11P	Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
	BH616UV8010	164Kb / 11P	Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
Lyontek Inc.	LY61L5128	325Kb / 15P	512K X 8 BIT HIGH SPEED CMOS SRAM
	LY61L5128	637Kb / 12P	512K X 8 BIT HIGH SPEED CMOS SRAM
	LY61L5128	233Kb / 15P	512K X 8 BIT HIGH SPEED CMOS SRAM
	LY61L5128A	242Kb / 11P	512K X 8 BIT HIGH SPEED CMOS SRAM
	LY61L5128A	500Kb / 12P	512K X 8 BIT HIGH SPEED CMOS SRAM
Alliance Semiconductor ...	AS6C4008-55TIN	2Mb / 15P	512K X 8 BIT LOW POWER 512K X 8 BIT LOW POWER CMOS SRAM

More results

BH62UV4000EIG55 Datasheet(PDF) 3 Page - Brilliance Semiconductor

BH62UV4000EIG55 Datasheet(HTML) 3 Page - Brilliance Semiconductor

Similar Part No. - BH62UV4000EIG55

Similar Description - BH62UV4000EIG55

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL