BH62UV4000EIG55 datasheet(6/12 Pages) BSI

Part #	BH62UV4000EIG55

Description	Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit

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Manufacturer	BSI [Brilliance Semiconductor]

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BH62UV4000

R0201-BH62UV4000

Revision

1.2

Aug.

2006

6

n AC ELECTRICAL CHARACTERISTICS (T

A = -40

OC to +85OC)

WRITE CYCLE

CYCLE TIME : 55ns

JEDEC

PARAMETER

NAME

PARANETER

NAME

DESCRIPTION

MIN.

TYP.

MAX.

UNITS

tAVAX

tWC

Write Cycle Time

55

--

ns

tAVWL

tAS

Address Set up Time

0

--

ns

tAVWH

tAW

Address Valid to End of Write

45

--

ns

tELWH

tCW

Chip Select to End of Write

45

--

ns

tWLWH

tWP

Write Pulse Width

35

--

ns

tWHAX

tWR

Write Recovery Time

(CE, WE)

0

--

ns

tWLQZ

tWHZ

Write to Output High Z

--

20

ns

tDVWH

tDW

Data to Write Time Overlap

25

--

ns

tWHDX

tDH

Data Hold from Write Time

0

--

ns

tGHQZ

tOHZ

Output Disable to Output in High Z

--

25

ns

tWHQX

tOW

End of Write to Output Active

5

--

ns

n SWITCHING WAVEFORMS (WRITE CYCLE)

WRITE CYCLE 1

(1)

tWC

tWR

(3)

tCW

(11)

tWP

(2)

tAW

tOHZ

(4,10)

tAS

tDH

tDW

DIN

DOUT

WE

CE

OE

ADDRESS

(5)

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BH62UV4000EIG55 Datasheet(PDF) 6 Page - Brilliance Semiconductor

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