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BH616UV1611DIG55 Datasheet(PDF) 4 Page - Brilliance Semiconductor |
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BH616UV1611DIG55 Datasheet(HTML) 4 Page - Brilliance Semiconductor |
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4 / 12 page  BH616UV1611 R0201-BH616UV1611 Revision 1.3 Otc. 2006 4 n ABSOLUTE MAXIMUM RATINGS (1) SYMBOL PARAMETER RATING UNITS VTERM Terminal Voltage with Respect to GND -0.5 (2) to 4.6V V TBIAS Temperature Under Bias -40 to +125 OC TSTG Storage Temperature -60 to +150 OC PT Power Dissipation 1.0 W IOUT DC Output Current 20 mA 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. –2.0V in case of AC pulse width less than 30 ns n OPERATING RANGE RANG AMBIENT TEMPERATURE VCC Industrial -40 OC to + 85OC 1.65V ~ 3.6V n CAPACITANCE (1) (T A = 25 OC, f = 1.0MHz) SYMBOL PAMAMETER CONDITIONS MAX. UNITS CIN Input Capacitance VIN = 0V 6 pF CIO Input/Output Capacitance VI/O = 0V 8 pF 1. This parameter is guaranteed and not 100% tested. n DC ELECTRICAL CHARACTERISTICS (T A = -40 OC to +85OC) PARAMETER NAME PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS VCC Power Supply 1.65 -- 3.6 V VCC=1.8V 0.4 VIL Input Low Voltage VCC=3.6V -0.3 (2) -- 0.8 V VCC=1.8V 1.4 VIH Input High Voltage VCC=3.6V 2.2 -- VCC+0.3 (3) V IIL Input Leakage Current VIN = 0V to VCC, CE1 = VIH or CE2 = VIL -- -- 1 uA ILO Output Leakage Current VI/O = 0V to VCC , CE1 = VIH or CE2 = VIL or OE = VIH or UB = LB = VIH -- -- 1 uA VCC = Max, IOL = 0.2mA VCC=1.8V 0.2 VOL Output Low Voltage VCC = Max, IOL = 2.0mA VCC=3.6V -- -- 0.4 V VCC = Min, IOH = -0.1mA VCC=1.8V VCC-0.2 VOH Output High Voltage VCC = Min, IOH = -1.0mA VCC=3.6V 2.4 -- -- V VCC=1.8V 6 8 ICC Operating Power Supply Current CE1 = VIL and CE2 = VIH, IDQ = 0mA, f = FMAX (4) VCC=3.6V -- 8 10 mA VCC=1.8V 1.0 1.5 ICC1 Operating Power Supply Current CE1 = VIL and CE2 = VIH, IDQ = 0mA, f = 1MHz VCC=3.6V -- 1.5 2.0 mA VCC=1.8V 0.5 ICCSB Standby Current – TTL CE1 = VIH, or CE2 = VIL, IDQ = 0mA VCC=3.6V -- -- 1.0 mA VCC=1.8V 4.0 25 ICCSB1 Standby Current – CMOS CE1≧VCC-0.2V or CE2≦0.2V, VIN≧VCC-0.2V or VIN≦0.2V VCC=3.6V -- 5.0 (5) 30 uA 1. Typical characteristics are at TA=25 OC and not 100% tested. 2. Undershoot: -1.0V in case of pulse width less than 20 ns. 3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns. 4. FMAX=1/tRC. 5. VCC=3.0V |
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