BH616UV8010 datasheet(6/11 Pages) BSI

Part #	BH616UV8010

Description	Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit

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Manufacturer	BSI [Brilliance Semiconductor]

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BH616UV8010

R0201-BH616UV8010

Revision

1.2

May.

2006

6

READ CYCLE 2

(1,3,4)

READ CYCLE 3

(1, 4)

NOTES:

1. WE is high in read Cycle.

2. Device is continuously selected when CE1 = VIL and CE2= VIH.

3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.

4. OE = VIL.

5. Transition is measured ± 500mV from steady state with CL = 5pF.

The parameter is guaranteed but not 100% tested.

tOH

tRC

tOE

tBE

tBDO

DOUT

CE1

OE

ADDRESS

tCLZ1

(5)

tACS1

tCHZ

(1,5)

tOHZ

(5)

tOLZ

tAA

LB, UB

tBA

tCLZ2

(5)

tCHZ2

(2,5)

CE2

tACS2

tCLZ

(5,6)

DOUT

CE2

CE1

tACS2

(6)

tACS1

tCHZ

(5, 6)

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