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BS62UV256 Datasheet(PDF) 1 Page - Brilliance Semiconductor |
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BS62UV256 Datasheet(HTML) 1 Page - Brilliance Semiconductor |
1 / 10 page Ultra Low Power CMOS SRAM 32K X 8 bit BS62UV256 R0201-BS62UV256 Revision 2.6 Sep. 2006 1 Pb-Free and Green package materials are compliant to RoHS n FEATURES Ÿ Wide V CC low operation voltage : 1.8V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V Operation current : 15mA (Max.) at 150ns 0.5mA (Max.) at 1MHz Standby current : 0.005uA(Typ.) at 25 OC VCC = 3.0V Operation current : 25mA (Max.) at 150ns 1mA (Max.) at 1MHz Standby current : 0.01uA (Typ.) at 25 OC Ÿ High speed access time : -10 100ns (Max.) -15 150ns (Max.) Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE and OE options Ÿ Three state outputs and TTL compatible Ÿ Fully static operation Ÿ Data retention supply voltage as low as 1.5V n DESCRIPTION The BS62UV256 is a high performance, ultra low power CMOS Static Random Access Memory organized as 32,768 by 8 bits and operates form a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.005uA and maximum access time of 150ns in 2.0V operation. Easy memory expansion is provided by an active LOW chip enable (CE), and active LOW output enable (OE) and three-state output drivers. The BS62UV256 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62UV256 is available in DICE form, JEDEC standard 28 pin 330mil Plastic SOP, 600mil Plastic DIP, 8mmx13.4mm TSOP (normal type). n POWER CONSUMPTION POWER DISSIPATION STANDBY (ICCSB1, Max) Operating (ICC, Max) VCC=3.0V VCC=2.0V PRODUCT FAMILY OPERATING TEMPERATURE VCC=3.0V VCC=2.0V 1MHz fMax. 1MHz fMax. PKG TYPE BS62UV256DC DICE BS62UV256PC PDIP-28 BS62UV256SC SOP-28 BS62UV256TC Commercial +0 OC to +70OC 0.4uA 0.4uA 0.9mA 20mA 0.6mA 10mA TSOP-28 BS62UV256PI PDIP-28 BS62UV256SI SOP-28 BS62UV256TI Industrial -40 OC to +85OC 0.7uA 0.7uA 1.0mA 25mA 0.8mA 15mA TSOP-28 n PIN CONFIGURATIONS n BLOCK DIAGRAM Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND VCC WE A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 28 27 26 25 24 23 22 21 20 19 18 17 16 15 BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI • Address Input Buffer Row Decoder Memory Array 512X512 Column I/O Write Driver Sense Amp Column Decoder Address Input Buffer A3 A2 A1 A0 A10 Data Input Buffer Control DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 A5 A6 A7 A12 A14 A13 A8 A9 A11 8 8 8 8 6 64 512 512 9 A4 CE WE OE VCC GND Data Output Buffer A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 BS62UV256TC BS62UV256TI 28 27 26 25 24 23 22 21 20 19 18 17 16 15 |
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