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BS616LV1611 Datasheet(PDF) 5 Page - Brilliance Semiconductor

Part # BS616LV1611
Description  Very Low Power CMOS SRAM 1M X 16 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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BS616LV1611 Datasheet(HTML) 5 Page - Brilliance Semiconductor

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BS616LV1611
R0201-BS616LV1611
Revision
2.3
May.
2006
5
n AC ELECTRICAL CHARACTERISTICS (T
A = -40
OC to +85OC)
READ CYCLE
CYCLE TIME : 55ns
(VCC=3.0~5.5V)
CYCLE TIME : 70ns
(VCC=2.7~5.5V)
JEDEC
PARAMETER
NAME
PARANETER
NAME
DESCRIPTION
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
UNITS
tAVAX
tRC
Read Cycle Time
55
--
--
70
--
--
ns
tAVQX
tAA
Address Access Time
--
--
55
--
--
70
ns
tELQV1
tACS1
Chip Select Access Time
(CE1)
--
--
55
--
--
70
ns
tELQV2
tACS2
Chip Select Access Time
(CE2)
--
--
55
--
--
70
ns
tBLQV
tBA
Data Byte Control Access Time
(LB, UB)
--
--
55
--
--
70
ns
tGLQV
tOE
Output Enable to Output Valid
--
--
30
--
--
35
ns
tELQX1
tCLZ1
Chip Select to Output Low Z
(CE1)
10
--
--
10
--
--
ns
tELQX2
tCLZ2
Chip Select to Output Low Z
(CE2)
10
--
--
10
--
--
ns
tBLQX
tBE
Data Byte Control to Output Low Z
(LB, UB)
10
--
--
10
--
--
ns
tGLQX
tOLZ
Output Enable to Output Low Z
5
--
--
5
--
--
ns
tEHQZ1
tCHZ1
Chip Select to Output High Z
(CE1)
--
--
30
--
--
35
ns
tEHQZ2
tCHZ2
Chip Select to Output High Z
(CE2)
--
--
30
--
--
35
ns
tBHQZ
tBDO
Data Byte Control to Output High Z (LB, UB)
--
--
30
--
--
35
ns
tGHQZ
tOHZ
Output Enable to Output High Z
--
--
25
--
--
30
ns
tAVQX
tOH
Data Hold from Address Change
10
--
--
10
--
--
ns
n SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
tRC
tOH
tAA
DOUT
ADDRESS
tOH


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