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BS616LV1010ECP55 Datasheet(PDF) 6 Page - Brilliance Semiconductor

Part # BS616LV1010ECP55
Description  Very Low Power CMOS SRAM 128K X 16 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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BS616LV1010ECP55 Datasheet(HTML) 6 Page - Brilliance Semiconductor

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BS616LV2016
R0201-BS616LV2016
Revision
1.4
Nov.
2006
6
READ CYCLE 2
(1,3,4)
READ CYCLE 3
(1, 4)
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL.
5. Transition is measured
± 500mV from steady state with C
L = 5pF.
The parameter is guaranteed but not 100% tested.
tOH
tRC
tOE
tBE
tBDO
DOUT
CE
OE
ADDRESS
tCLZ
(5)
tCHZ
(1,5)
tOHZ
(5)
tOLZ
tAA
LB, UB
tBA
tCLZ
(5)
tCHZ
(5)
DOUT
LB, UB
CE
tBA
tACS
tBE
tBDO


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