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BS616LV1010TCG70 Datasheet(PDF) 6 Page - Brilliance Semiconductor |
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BS616LV1010TCG70 Datasheet(HTML) 6 Page - Brilliance Semiconductor |
6 / 11 page BS616LV1611 R0201-BS616LV1611 Revision 2.3 May. 2006 6 READ CYCLE 2 (1,3,4) READ CYCLE 3 (1, 4) NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE1 = VIL and CE2= VIH. 3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high. 4. OE = VIL. 5. Transition is measured ± 500mV from steady state with CL = 5pF. The parameter is guaranteed but not 100% tested. tCLZ (5) DOUT CE2 CE1 tACS2 tACS1 tCHZ (5) tOH tRC tOE tBE tBDO DOUT CE1 OE ADDRESS tCLZ1 (5) tACS1 tCHZ (1,5) tOHZ (5) tOLZ tAA LB, UB tBA tCLZ2 (5) tCHZ2 (2,5) CE2 tACS2 |
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